Organic light emitting display apparatus and method of manufacturing the same

ABSTRACT

An organic light emitting display (OLED) device includes an organic light emitting diode having an anode and a cathode. The organic light emitting diode is configured to receive a reference voltage. A control transistor includes a first control electrode and a first semiconductor active layer. The control transistor is configured to receive a control signal. A driving transistor includes a second control electrode that is electrically connected to the control transistor, an input electrode that is configured to receive a power voltage, an output electrode that is electrically connected to the anode of the organic light emitting diode, and a second semiconductor active layer that includes a different material from that of the first semiconductor active layer. A shielding electrode is disposed on the second semiconductor active layer, overlapping the driving transistor, and configured to receive the power voltage.

CROSS-REFERENCE TO RELATED APPLICATIONS

This U.S. non-provisional patent application claims priority under 35U.S.C. § 119 to Korean Patent Application No. 10-2016-0054176, filed onMay 2, 2016, in the Korean Intellectual Property Office, the entirecontents of which are hereby incorporated by reference.

TECHNICAL FIELD

The present disclosure relates to a display apparatus, and inparticular, to an organic light emitting display apparatus and a methodof manufacturing the same.

DISCUSSION OF THE RELATED ART

An organic light emitting display apparatus includes a plurality ofpixels. Each of the plurality of pixels includes an organic lightemitting diode and a circuit part for controlling the organic lightemitting diode. The circuit part includes a control transistor, adriving transistor, and a storage capacitor.

The organic light emitting diode includes an anode, a cathode, and anorganic light emitting layer disposed between the anode and the cathode.If a voltage higher than a threshold voltage of the organic lightemitting layer is applied between the anode and the cathode, light isemitted from the organic light emitting diode.

SUMMARY

An organic light emitting display (OLED) device includes an organiclight emitting diode having an anode and a cathode. The organic lightemitting diode is configured to receive a reference voltage. A controltransistor includes a first control electrode and a first semiconductoractive layer. The control transistor is configured to receive a controlsignal. A driving transistor includes a second control electrode that iselectrically connected to the control transistor, an input electrodethat is configured to receive a power voltage, an output electrode thatis electrically connected to the anode of the organic light emittingdiode, and a second semiconductor active layer that includes a differentmaterial from that of the first semiconductor active layer. A shieldingelectrode is disposed on the second semiconductor active layer,overlapping the driving transistor, and configured to receive the powervoltage.

An organic light emitting display (OLED) device includes an organiclight emitting diode having an anode and a cathode. The organic lightemitting diode is configured to receive a reference voltage. A controltransistor includes a first control electrode and a first semiconductoractive layer. The first control electrode is configured to receive acontrol signal. The first semiconductor active layer is disposed belowthe first control electrode. A driving transistor includes a secondcontrol electrode, an input electrode, an output electrode, and a secondsemiconductor active layer. The second control electrode is electricallyconnected to the control transistor. The input electrode is configuredto receive a power voltage. The output electrode is electricallyconnected to the anode of the organic light emitting diode. The secondsemiconductor active layer is disposed on the second control electrode.A shielding electrode is disposed on the second semiconductor activelayer. The shielding electrode overlaps the driving transistor and isconfigured to receive the power voltage.

A method of manufacturing an organic light emitting display apparatusincludes forming a first semiconductor layer on a base substrate. Afirst conductive layer is formed on the first semiconductor layer. Asecond conductive layer is formed on the first conductive layer. Asecond semiconductor layer is formed on the second conductive layer. Ashielding electrode is formed on the second semiconductor active layer.A portion of the first semiconductor layer forms a first semiconductoractive layer of a control transistor. A portion of the first conductivelayer forms a first control electrode of the control transistor. Aportion of the second conductive layer forms a second control electrodeof a driving transistor. A portion of the second semiconductor layerforms a second semiconductor active layer of the driving transistor.

An organic light emitting display device includes an organic lightemitting diode receiving a power voltage through a power line, a drivingtransistor including a channel region, and a shielding electrodedisposed over the channel region of the driving transistor andconfigured to receive the power voltage.

BRIEF DESCRIPTION OF THE DRAWINGS

A more complete appreciation of the present disclosure and many of theattendant aspects thereof will be readily obtained as the same becomesbetter understood by reference to the following detailed descriptionwhen considered in connection with the accompanying drawings, wherein:

FIG. 1 is a block diagram illustrating an organic light emitting displayapparatus according to exemplary embodiments of the inventive concept;

FIG. 2 is a circuit diagram illustrating a pixel according to exemplaryembodiments of the inventive concept;

FIG. 3 is a waveform diagram illustrating driving signals for drivingpixels shown in FIG. 2;

FIG. 4 is a diagram illustrating an i-th pixel according to exemplaryembodiments of the inventive concept;

FIGS. 5A to 5J are plan views illustrating layers to be formed by aprocess of manufacturing the i-th pixel shown in FIG. 4;

FIG. 6 is a cross-sectional view taken along line I-I′ of FIG. 4;

FIG. 7 is a cross-sectional view taken along line II-II′ of FIG. 4;

FIG. 8 is a cross-sectional view taken along line III-III′ of FIG. 4;and

FIG. 9 is a flow chart illustrating a method of manufacturing an organiclight emitting display apparatus, according to exemplary embodiments ofthe inventive concept.

DETAILED DESCRIPTION

Exemplary embodiments of the inventive concepts will now be describedmore fully with reference to the accompanying drawings. The inventiveconcepts may, however, be embodied in many different forms and shouldnot be construed as being limited to the exemplary embodiments set forthherein; rather, these embodiments are provided so that this disclosurewill be thorough and complete, and will fully convey the presentinventive concept to those of ordinary skill in the art. In thedrawings, the thicknesses of layers and regions may be exaggerated forclarity. Like reference numerals in the may denote like elementsthroughout the specification and drawings.

It will be understood that when an element is referred to as being“connected” or “coupled” to another element, it can be directlyconnected or coupled to the other element or intervening elements may bepresent. FIG. 1 is a block diagram illustrating an organic lightemitting display apparatus according to exemplary embodiments of theinventive concept. As shown in FIG. 1, an organic light emitting displayapparatus may include a timing control unit 100, a scan driving unit200, a data driving unit 300, and an organic light emitting displaypanel DP.

The timing control unit 100 may be configured to receive input imagesignals and convert the input image signals to image data DATA whichhave a data format suitable for an interface specification of the datadriving unit 300. The timing control unit 100 may output the image dataDATA and various control signals (e.g., data and scan control signalsDCS and SCS).

The scan driving unit 200 may be configured to receive the scan controlsignal SCS from the timing control unit 100. The scan control signal SCSmay include a vertical start signal to initiate an operation of the scandriving unit 200, a clock signal to determine when to output signals,and so forth. The scan driving unit 200 may also be configured toproduce a plurality of scan signals and then to sequentially output theplurality of scan signals to a plurality of scan lines SL1, SL2, SL3, .. . SLn, to be described below. The scan driving unit 200 may also beconfigured to produce a plurality of light-emitting control signals inresponse to the scan control signal SCS and to output the plurality oflight-emitting control signals to a plurality of light-emitting linesEL1, EL2, EL3, . . . ELn, to be described below.

Although FIG. 1 illustrates an example in which the plurality of scansignals and the plurality of light-emitting control signals are outputfrom a single scan driving unit (e.g., 200), the inventive concept isnot limited thereto. In some exemplary embodiments of the presentinventive concept, the organic light emitting display apparatus mayinclude a plurality of scan driving units, which are configured todivide and output a plurality of scan signals and a plurality oflight-emitting control signals. Furthermore, in certain exemplaryembodiments of the present inventive concept, the organic light emittingdisplay apparatus may further include driving circuits, one of which isused to produce and output the plurality of scan signals, and another ofwhich is used to produce and output the plurality of light-emittingcontrol signals.

The data driving unit 300 may be configured to receive the data controlsignal DCS and the image data DATA from the timing control unit 100. Inthe data driving unit 300, the image data DATA may be converted intodata signals, and then, the data signals may be output to a plurality ofdata lines DL1, DL2, . . . DLm to be described below. The data signalsmay be provided in the form of analog voltages, whose levels aredetermined based on gradation levels of the image data DATA.

The organic light emitting display panel DP may include the scan linesSL1-SLn, the light-emitting lines EL1-ELn, the data lines DL1-DLm, and aplurality of pixels PX. The plurality of the scan lines SL1-SLn mayextend in a first direction DR1 and may be arranged in a seconddirection DR2 perpendicular to the first direction DR1. Each of thelight-emitting lines EL1-ELn may be disposed in parallel with acorresponding one of the scan lines SL1-SLn. The data lines DL1-DLm maybe disposed to cross the scan lines SL1-SLn and may be electricallydisconnected from the scan lines SL1-SLn.

Each of the pixels PX may be coupled to a corresponding one of the scanlines SL1-SLn, a corresponding one of the light-emitting lines EL1-ELn,and a corresponding one of the data lines DL1-DLm. In some exemplaryembodiments of the present inventive concept, a power voltage ELVDD anda reference voltage ELVSS may be applied to each of the pixels PX. Here,the reference voltage ELVSS may be lower than the power voltage ELVDD.Each of the pixels PX may be coupled to a power line PL through whichthe power voltage ELVDD is applied. Each of the pixels PX may be coupledto a refresh line RL, which is configured to receive an initializationvoltage Vint.

Each of the pixels PX may be electrically connected to two scan lines.For example, some of the pixels PX (e.g., a second row of the pixels)connected to a second scan line SL2 may also be connected to a firstscan line SL1, as shown in FIG. 1. The second row of the pixels PX maybe configured to receive the scan signals that are applied to the secondscan line SL2 and the first scan line SL1, respectively.

The organic light emitting display panel DP may further include aplurality of dummy scan lines and a plurality of refresh control lines.The dummy scan lines and the refresh control lines may be configured toreceive signals to be applied to the scan lines SL1-SLn. The dummy scanlines and the refresh control lines may be electrically connected toeach other. Each of the dummy scan lines and each of the refresh controllines may be electrically connected to a corresponding one of the scanlines SL1-SLn.

Furthermore, some of the pixels PX (e.g., a column of the pixels)connected to one of the data lines DL1-DLm may be connected to eachother. In the column of the pixels PX, two pixels adjacent to each othermay be electrically connected to each other.

Each of the pixels PX may include an organic light emitting diode and acircuit part for controlling light emission of the organic lightemitting diode. The circuit part may include a plurality of thin-filmtransistors (hereinafter, transistors) and at least one capacitor. Theplurality of pixels PX may include red, green, and blue pixels which areconfigured to emit red, green, and blue light respectively. The organiclight emitting diodes of the red, green, and blue pixels may includeorganic light emitting layers that are formed of different materials.

A plurality of photolithography processes may be performed to form thescan lines SL1-SLn, the light-emitting lines EL1-ELn, the data linesDL1-DLm, the power line PL, the refresh line RL, and the pixels PX on abase substrate. For example, a deposition or coating process may beperformed several times to form a plurality of insulating layers on thebase substrate. The insulating layers may include an organic layerand/or an inorganic layer. In addition, an encapsulation layer may beformed on the base substrate to protect the pixels PX.

FIG. 2 is a circuit diagram illustrating a pixel according to exemplaryembodiments of the present inventive concept.

FIG. 2 illustrates an i-th pixel PXi connected to a k-th data line DLkof the data lines DL1-DLm.

The i-th pixel PXi may include an organic light emitting diode ED and acircuit part, which controls the organic light emitting diode ED. Thecircuit part may include seven transistors T1, T2, T3, T4, T5, T6, andT7 and one capacitor Cst. The description that follows will refer to anexample in which the seven transistors T1-T7 are p-type transistors.However, the circuit part shown in FIG. 2 is one of various examples ofthe circuit part, and thus, the inventive concept is not limitedthereto.

The circuit part may include a driving transistor and a controltransistor.

The driving transistor may be configured to control an amount of drivingcurrent to be supplied to the organic light emitting diode ED. In someexemplary embodiments of the present inventive concept, the drivingtransistor may be a first transistor T1.

The control transistor may include a control terminal to which a controlsignal is applied. The control signal applied to the i-th pixel PXi mayinclude an (i−1)-th scan signal Si−1, an i-th scan signal Si, a datasignal Di, and an i-th light-emitting control signal Ei.

In some exemplary embodiments of the present inventive concept, thecontrol transistor may include second to seventh transistors T2-T7. Thedescription that follows will refer to an example in which the controltransistor consists of six transistors, but the inventive concept is notlimited thereto. For example, in certain embodiments, the controltransistor may consist of five or fewer transistors or consist of sevenor more transistors.

A node between an output terminal of the fourth transistor T4 and thecontrol terminal of the first transistor T1 will be referred to as afirst node N1, and a node between the seventh transistor T7 and thestorage capacitor Cst will be referred to as a second node N2.

The first transistor T1 may include an input electrode, which is used toreceive the power voltage ELVDD through the fifth transistor T5, thecontrol electrode coupled to the first node N1, and an output electrode.The output electrode of the first transistor T1 may be used to apply thepower voltage ELVDD to the organic light emitting diode ED via the sixthtransistor T6. The input electrode of the first transistor T1 may becoupled to the first node N1 via the third transistor T3.

The first transistor T1 may be used to control an amount of drivingcurrent to be supplied to the organic light emitting diode ED, based onelectric potential the first node N1.

The second transistor T2 may include an input electrode coupled to thek-th data line DLk, a control electrode coupled to an i-th scan lineSLi, and an output electrode coupled to the output electrode of thefirst transistor T1. The second transistor T2 may be turned on or off,depending on a scan signal Si (e.g., i-th scan signal) applied to thei-th scan line SLi, and may be used to provide the data signal Diapplied to the k-th data line DLk to the storage capacitor Cst.

The third transistor T3 may include an input electrode coupled to theinput electrode of the first transistor T1, a control electrode coupledto the i-th scan line SLi, and an output electrode coupled to the firstnode N1. The third transistor T3 may be turned on or off by the i-thscan signal Si.

In the case where the second and third transistors T2 and T3 are turnedon, the first transistor T1 may be connected to the second and thirdtransistors T2 and T3 and diode-connected between the second and thirdtransistors T2 and T3. Accordingly, the second transistor T2 may becoupled to the first node N1 via the first and third transistors T1 andT3.

The storage capacitor Cst may be disposed between and coupled to thefirst node N1 and the anode of the organic light emitting diode ED. Thestorage capacitor Cst may be charged to a voltage level corresponding toa voltage applied to the first node N1.

The fourth transistor T4 may include an input electrode coupled to thepower line PL, a control electrode, which is used to receive the(i−1)-th scan signal Si−1, and an output electrode coupled to the firstnode N1. A switching operation of the fourth transistor T4 may becontrolled in response to the (i−1)-th scan signal Si−1. The controlelectrode of the fourth transistor T4 may be coupled to an i-th dummyscan line DMi. The (i−1)-th scan signal Si−1 may be applied to the i-thdummy scan line DMi. The i-th dummy scan line DMi may be electricallyconnected to a scan line of the (i−1)-th pixel, which is turned on justbefore the i-th pixel PXi of FIG. 2 is turned on. A signal to be appliedto the i-th dummy scan line DMi may be substantially the same as thescan signal to be applied to the (i−1)-th pixel.

The fifth transistor T5 may include an input electrode coupled to thepower line PL, a control electrode coupled to the i-th light-emittingline ELi, and an output electrode coupled to the input electrode of thefirst transistor T1. A switching operation of the fifth transistor T5may be controlled in response to the i-th light-emitting control signalEi.

The sixth transistor T6 may include an input electrode coupled to theoutput electrode of the first transistor T1, a control electrode coupledto the i-th light-emitting line ELi, and an output electrode coupled tothe anode of the organic light emitting diode ED. A switching operationof the sixth transistor T6 may be controlled in response to the i-thlight-emitting control signal Ei to be transmitted from the i-thlight-emitting line ELi.

Switching operations of the fifth and sixth transistors T5 and T6 may becontrolled to selectively establish a current path between the powerline PL and the organic light emitting diode ED. In certain exemplaryembodiments of the present inventive concept, one of the fifth and sixthtransistors T5 and T6 may be omitted.

The seventh transistor T7 may include an input electrode coupled to therefresh line RL, a control electrode, which is used to receive an(i+1)-th scan signal Si+1, and an output electrode coupled to the anodeof the organic light emitting diode ED. The control electrode of theseventh transistor T7 may be coupled to an i-th refresh control lineGBi. An (i+1)-th scan signal Si+1 may be applied to the i-th refreshcontrol line GBi. The i-th refresh control line GBi may be electricallyconnected to a scan line of the (i+1)-th pixel, which is turned on justafter the i-th pixel PXi of FIG. 2 is turned on. A signal to be appliedto the i-th refresh control line GBi may be substantially the same asthe scan signal to be applied to the (i+1)-th pixel.

If the fourth transistor T4 is turned on, the first node N1 may berefreshed or initialized by the power voltage ELVDD.

If the seventh transistor T7 is turned on, the second node N2 may beinitialized by the initialization voltage Vint. The anode of the organiclight emitting diode ED may also be initialized by the initializationvoltage Vint, when the seventh transistor 17 is turned on. A potentialdifference between the initialization voltage Vint and the referencevoltage ELVSS applied to the cathode of the organic light emitting diodeED may be lower than a light-emitting threshold voltage of the organiclight emitting diode ED.

FIG. 3 is a waveform diagram illustrating driving signals for drivingpixels shown in FIG. 2.

An operation of the i-th pixel will be described below in more detailwith reference to FIGS. 2 and 3. The organic light emitting displaypanel (e.g., see DP of FIG. 1) may be configured to display an image foran interval of each frame. A plurality of scan signals applied to thescan lines SL1-SLn may be sequentially scanned for an interval of eachframe. FIG. 3 illustrates a part of one of the frames.

Referring to FIGS. 2 and 3, the (i−1)-th scan signal Si−1 applied to thei-th dummy scan line DMi may be activated during a first refresh periodRP1. The description of FIG. 3 will refer to an exemplary embodiment ofthe present inventive concept in which a signal is activated when thesignal has a low level. For example, in FIG. 3, a low level of a signalmay be a turn-on voltage of a transistor, to which the signal isapplied.

In the case where the fourth transistor T4 is turned on by the (i−1)-thscan signal Si−1, the power voltage ELVDD may be applied to the firstnode N1.

The i-th scan signal Si applied to the i-th scan line SLi may beactivated during a data input period DIP following the first refreshperiod RP1. The i-th scan signal Si, which is activated during the datainput period DIP, may be used to turn on the second and thirdtransistors T2 and T3 and may also make the first transistor T1 adiode-like element between the second and third transistors T2 and T3.

During the data input period DIP, the data signal Di may be applied tothe k-th data line DLk. The data signal Di may be transmitted to thefirst node N1 via the second transistor T2, the first transistor T1, andthe third transistor T3. Here, since the first transistor T1 is used asa diode-like element, the first node N1 may have an electric potentialcorresponding to a voltage difference between the data signal Di and athreshold voltage of the first transistor T1. During the data inputperiod DIP, a voltage difference between the first node N1 and thesecond node N2 may be stored in the storage capacitor Cst. The secondnode N2 may be initialized by the initialization voltage Vint of aprevious frame.

The i-th light-emitting control signal Ei may be in an inactivated stateduring the first refresh period RP1 and the data input period DIP andmay be activated during a light-emitting period EP following the datainput period DIP. The fifth and sixth transistors T5 and T6 may beturned on by the i-th light-emitting control signal Ei, and the voltagestored in the storage capacitor Cst may be applied to a controlelectrode of the first transistor T1.

The i-th light-emitting control signal Ei may be used to form a currentpath between the power line PL and the organic light emitting diode ED.Accordingly, during the light-emitting period EP, light may be emittedfrom the organic light emitting diode ED. The organic light emittingdiode ED may have brightness that depends on the voltage stored in thestorage capacitor Cst.

The (i+1)-th scan signal Si+1 may be activated during a second refreshperiod RP2 following the light-emitting period EP. In the case where theseventh transistor T7 is turned on by the (i+1)-th scan signal Si+1, theinitialization voltage Vint may be applied to the second node N2, andthus, the anode of the organic light emitting diode ED may beinitialized to the initialization voltage Vint. Light emission from theorganic light emitting diode ED may be stopped during the second refreshperiod RP2.

Although, in FIG. 3, gaps are illustrated between the first refreshperiod RP1, the data input period DIP, the light-emitting period EP, andthe second refresh period RP2, this is just one exemplary embodiment ofthe present inventive concept. In various other embodiments, the firstrefresh period RP1, the data input period DIP, the light-emitting periodEP, and the second refresh period RP2 may be repeated without gapstherebetween.

FIG. 4 is a layout of an i-th pixel, according to an exemplaryembodiment of the present inventive concept. FIGS. 5A to 5J are planviews illustrating layers to be formed by a process of manufacturing thei-th pixel shown in FIG. 4. FIG. 6 is a sectional view taken along lineI-I′ of FIG. 4. FIG. 7 is a sectional view taken along line II-II′ ofFIG. 4. FIG. 8 is a sectional view taken along line III-III′ of FIG. 4.

Referring to FIGS. 2 and 4, an organic light emitting diode ED, first toseventh transistors T1-T7, and a storage capacitor Cst may be disposedon a base substrate (e.g., SUB of FIG. 6). In some exemplary embodimentsof the present inventive concept, a dummy scan line DMi, a refreshcontrol line GBi, a scan line SLi, a light-emitting line ELi, a dataline DLk, and a power line PL may be disposed on the base substrate SUB.

Referring to FIG. 5A and FIGS. 6 to 8, a buffer layer BF may be disposedon the base substrate SUB. The buffer layer BF may be formed of or mayotherwise include inorganic and/or organic materials. For example, thebuffer layer BF may be formed of or may otherwise include siliconnitride and/or silicon oxide.

A first semiconductor layer AL1 may be formed on the buffer layer BF. Aportion of the first semiconductor layer AL1 may be used as a channelregion of at least one of the second to seventh transistors T2-T7. Forexample, a portion of the first semiconductor layer AL1 may be used as asemiconductor active layer ACT3 of the third transistor T3.

The formation of the first semiconductor layer AL1 may include aphotolithography process. In addition, the formation of the firstsemiconductor layer AL1 may include a doping or reduction process.

The first semiconductor layer AL1 may be formed of or may otherwiseinclude poly silicon. Accordingly, the channel regions of the second toseventh transistors T2-T7 may be formed of or may otherwise include polysilicon. This will be described in more detail below.

A first insulating layer 10 may be disposed on the first semiconductorlayer AL1. The first insulating layer 10 may be formed of or mayotherwise include inorganic and/or organic materials. For example, thefirst insulating layer 10 may be formed of or may otherwise includesilicon nitride and/or silicon oxide.

Referring to FIG. 5B and FIGS. 6 to 8, a first conductive layer may beformed on the first insulating layer 10. The first conductive layer mayhave portions which are used as a first electrode CS1 of the storagecapacitor Cst and control electrodes of the second to seventhtransistors T2-T7. In addition, the first conductive layer may includeother portions which are used as the dummy scan line DMi, the scan lineSLi, the light-emitting line ELi, and the refresh control line GBi. Aportion of the dummy scan line DMi may serve as the control electrode ofthe fourth transistor T4. Portions of the scan line SLi may serve as thecontrol electrodes of the second and third transistors T2 and T3.Portions of the light-emitting line ELi may serve as the controlelectrodes of the fifth and sixth transistors T5 and T6. A portion ofthe refresh control line GBi may serve as the control electrode of theseventh transistor T7.

A second insulating layer 20 may be disposed on the first conductivelayer. The second insulating layer 20 may be formed of or may otherwiseinclude inorganic and/or organic materials. For example, the secondinsulating layer 20 may be formed of or may otherwise include siliconnitride and/or silicon oxide.

Referring to FIG. 5C and FIGS. 6 to 8, a second conductive layer may bedisposed on the second insulating layer 20. The second conductive layermay include a portion which is used as a control electrode GE1 of thefirst transistor T1. The control electrode GE1 of the first transistorT1 may serve as a second electrode of the storage capacitor Cst. Thecontrol electrode GE1 of the first transistor T1 may have an opening OP1therein. The opening OP1 may prevent the control electrode of the firsttransistor T1 from being electrically connected to the first electrodeCS1 of the storage capacitor Cst, when the seventh transistor T7 and thefirst electrode CS1 of the storage capacitor Cst are connected to eachother through a sixth contact hole CH6 (e.g., see FIG. 6E) in asubsequent process.

A third insulating layer 30 may be disposed on the second conductivelayer. The third insulating layer 30 may be formed of or may otherwiseinclude inorganic and/or organic materials. For example, the thirdinsulating layer 30 may be formed of or may otherwise include siliconnitride and/or silicon oxide.

Referring to FIG. 5D and FIGS. 6 to 8, a second semiconductor layer maybe disposed on the third insulating layer 30. The second semiconductorlayer may include a semiconductor active layer ACT1 of the firsttransistor T1, a first connection electrode CNE1, and a secondconnection electrode CNE2. The first connection electrode CNE1 may beoverlapped with the input electrode of the seventh transistor T7. Thefirst connection electrode CNE1 may be connected to a refresh line RLand the input electrode of the seventh transistor T7, respectively, in asubsequent process. The second connection electrode CNE2 may beoverlapped with the output electrode of the seventh transistor T7. Thesecond connection electrode CNE2 may be connected to the anode of theorganic light emitting diode ED and the output electrode of the seventhtransistor T7, respectively, in a subsequent process.

The formation of the second semiconductor layer may include aphotolithography process. In addition, the formation of the secondsemiconductor layer may include a doping or reduction process.

The second semiconductor layer may be formed of or may otherwise includean oxide semiconductor material. The oxide semiconductor material mayinclude, for example, metal oxides of zinc (Zn), indium (In), gallium(Ga), tin (Sn), and titanium (Ti) or mixtures of metals (e.g., zinc(Zn), indium (In), gallium (Ga), tin (Sn), and titanium (Ti)) and/oroxides thereof. A metal may be reduced from the metal oxidesemiconductor, and such a metal may be included in the electrodes andthe lines. However, the metal might not be present in the channelregions.

Referring to FIG. 5E and FIGS. 6 to 8, contact holes CH1, CH2, CH3, CH4,CH5, CH6, CH7, CH8, CH9, and CH10 may penetrate at least the thirdinsulating layer 30. The contact holes CH1-CH10 may penetrate at leastone of the first to third insulating layers 10-30.

A first contact hole CHI may penetrate the first to third insulatinglayers 10-30 and may be disposed at a region, where the input electrodeof the seventh transistor T7 will be formed. A second contact hole CH2may penetrate the first to third insulating layers 10-30 and may bedisposed at a region where the output electrode of the seventhtransistor T7 will be formed. A third contact hole CH3 may penetrate thefirst to third insulating layers 10-30 and may be disposed at a regionwhere the input electrode of the fifth transistor T5 will be formed. Afourth contact hole CH4 may penetrate the first to third insulatinglayers 10-30 and may be disposed at a region where the output electrodeof the first transistor T1 will be formed. A fifth contact hole CH5 maypenetrate the first to third insulating layers 10-30 and may be disposedat a region where the input electrode of the first transistor T1 will beformed. A sixth contact hole CH6 may penetrate the second to thirdinsulating layers 20-30 and to expose the first electrode CSI of thestorage capacitor Cst. A seventh contact hole CH7 may penetrate thethird insulating layer 30 and may expose the control electrode of thefirst transistor T1. An eighth contact hole CH8 may penetrate the firstto third insulating layers 10-30 and may be disposed at a region wherethe input electrode of the second transistor T2 will be formed. A ninthcontact hole CH9 may penetrate the first to third insulating layers10-30 and may be disposed at a region where the output electrode of thethird transistor T3 will be formed. A tenth contact hole CH10 maypenetrate the first to third insulating layers 10-30 and may be disposedat a region where the input electrode of the fourth transistor T4 willbe formed.

Referring to FIG. 5F and FIGS. 6 to 8, a third conductive layer may bedisposed on the third insulating layer 30.

The third conductive layer may include the data line DLk, the power linePL, and the input and output electrodes of the first to seventhtransistors T1-T7.

The third conductive layer may be formed of or may otherwise include ametal. Although the third conductive layer is illustrated to be a singlelayer, the inventive concept is not limited thereto. For example, thethird conductive layer may include two or more metal layers. As anexample, the third conductive layer may have a triple layer structureincluding a Ti-containing first layer, an Al-containing second layer,and a Ti-containing third layer, which are sequentially stacked on thethird insulating layer 30.

The input electrode of the fifth transistor T5 may be connected to thepower line PL through the third contact hole CH3. The third conductivelayer overlapped with the fourth contact hole CH4 may be used as theoutput electrode of the first transistor T1. The third conductive layeroverlapped with the fifth contact hole CH5 may be used as the inputelectrode of the first transistor T1. The third conductive layeroverlapped with the sixth contact hole CH6 may be connected to the firstelectrode CS1 of the storage capacitor Cst. The third conductive layeroverlapped with the seventh contact hole CH7 may be connected to thecontrol electrode of the first transistor T1. The data line DLk may beconnected to the input electrode of the second transistor T2 through theeighth contact hole CH8. The third conductive layer overlapped with theninth contact hole CH9 may be used as the output electrode of the fourthtransistor T4. The power line PL may be connected to the fourthtransistor T4 through the tenth contact hole CH10.

A fourth insulating layer 40 may be disposed on the third conductivelayer. The fourth insulating layer 40 may be formed of or may otherwiseinclude inorganic and/or organic materials. For example, the fourthinsulating layer 40 may be formed of or may otherwise include siliconnitride and/or silicon oxide. The fourth insulating layer 40 may have aflat surface.

Referring to FIG. 5G and FIGS. 6 to 8, a plurality of contact holes maypenetrate the fourth insulating layer 40. For example, an eleventhcontact hole CH11 and a twelfth contact hole CH12 may penetrate thefourth insulating layer 40.

In some exemplary embodiments of the present inventive concept, theeleventh and twelfth contact holes CH11 and CH12 may expose at least aportion of the power line PL.

Referring to FIG. 5H and FIGS. 6 to 8, a shielding electrode SHD may bedisposed on the fourth insulating layer 40.

When viewed in a plan view, the shielding electrode SHD may cover thechannel region and the control electrode GE1 of the first transistor T1.

The shielding electrode SHD may be formed of or may otherwise include ametallic material. Although the third conductive layer is illustrated tobe a single layer, the inventive concept is not limited thereto. Forexample, the third conductive layer may include two or more metallayers. As an example, the third conductive layer may have a triplelayer structure including a Ti-containing first layer, an Al-containingsecond layer, and a Ti-containing third layer, which are sequentiallystacked on the fourth insulating layer 40.

The shielding electrode SHD may have the same material and the samestructure as the third conductive layer. For example, in the case wherethe third conductive layer has a single layered structure, the shieldingelectrode SHD may also have a single layered structure. In the casewhere the third conductive layer has a triple layered structure ofTi/Al/Ti, the shielding electrode SHD may also have a triple layeredstructure of Ti/Al/Ti.

The shielding electrode SHD may be connected to the power line PLthrough the eleventh contact hole CHI 1 and the twelfth contact holeCH12. The shielding electrode SHD may be applied with a constant powervoltage ELVDD.

The shielding electrode SHD will be described in more detail below.

A fifth insulating layer 50 may be disposed on the fourth insulatinglayer 40 which is covered with the shielding electrode SHD. The fifthinsulating layer 50 may be formed of or may otherwise include inorganicand/or organic materials. For example, the fifth insulating layer 50 maybe formed of or may otherwise include silicon nitride and/or siliconoxide.

Referring to FIG. 5I and FIGS. 6 to 8, a plurality of contact holes CH13and CH14 may penetrate at least the fifth insulating layer 50. Forexample, the contact holes CH13 and CH14 may penetrate the fourthinsulating layer 40 and the fifth insulating layer 50.

A fourth conductive layer may be disposed on the fifth insulating layer50. The fourth conductive layer may include an anode AE and the refreshline RL.

The anode AE may be connected to the input electrode of the sixthtransistor T6 through a thirteenth contact hole CH13. The refresh lineRL may be connected to the input electrode of the seventh transistor T7through a fourteenth contact hole CH14.

Referring to FIG. 5J and FIGS. 6 to 8, a pixel defining layer PDL may bedisposed on the fifth insulating layer 50. An opening OP exposing theanode AE may be defined in the pixel defining layer PDL. An organiclight emitting layer EML may be disposed on the anode AE and may beoverlapped with the opening OP. A cathode CE may be disposed on theorganic light emitting layer EML.

A first common layer CLH may be disposed between the anode AE and theorganic light emitting layer EML. A second common layer CLE may bedisposed between the organic light emitting layer EML and the cathodeCE. The first common layer CLH and the second common layer CLE may bedisposed on a plurality of the pixels PX (e.g., of FIG. 1). The cathodeCE may also be disposed on the plurality of pixels PX. In some exemplaryembodiments of the present inventive concept, at least one of the firstand second common layers CLH and CLE may be omitted.

The first common layer CLH may include a hole injection layer, and thesecond common layer CLE may include an electron injection layer. Thefirst common layer CLH may further include a hole transport layerinterposed between the hole injection layer and the organic lightemitting layer EML. The second common layer CLE may further include anelectron transport layer interposed between the electron injection layerand the organic light emitting layer EML. Each of the first and secondcommon layers CLH and CLE may further include at least one functionallayer.

Although not shown, an encapsulation layer may be disposed on thecathode CE to cover the organic light emitting diode ED. Theencapsulation layer may be formed of or may otherwise include an organiclayer and/or an inorganic layer.

Hereinafter, the driving transistor and the control transistor will becompared with reference to FIGS. 6 and 7.

The control transistor may have substantially the same layer structureas the third transistor T3 shown in FIG. 7, and thus, the thirdtransistor T3 of FIG. 7 will be described as an example of the controltransistor.

The control electrode GE1 of the first transistor T1 may be disposed ata level different from that of the control electrode GE3 of the thirdtransistor T3. For example, the control electrode GE1 of the firsttransistor T1 may be disposed at a higher level than that of the controlelectrode GE3 of the third transistor T3. The control electrode GE3 ofthe third transistor T3 may be disposed at the same level as those ofthe dummy scan line DMi, the scan line SLi, the light-emitting line ELi,and the refresh control line GBi.

The semiconductor active layer ACT1 of the first transistor T1 may bedisposed on the control electrode GE1. The semiconductor active layerACT1 of the first transistor T1 may be used as a portion of the secondsemiconductor layer AL2 shown in FIG. 5D. The first transistor T1 mayhave a top-gate structure.

The first transistor T1 may include an input electrode SE1 and an outputelectrode DE1 which are disposed on the third insulating layer 30.

The semiconductor active layer ACT1 of the first transistor T1 may beformed of or may otherwise include an oxide semiconductor material. Theoxide semiconductor material may be the same as that previouslydescribed with reference to FIG. 5D.

The semiconductor active layer ACT3 of the third transistor T3 may bedisposed below the control electrode GE3. The semiconductor active layerACT3 of the third transistor T3 may be defined as a portion of the firstsemiconductor layer AL1 shown in FIG. 5A. The third transistor T3 mayhave a bottom-gate structure.

The third transistor T3 may include an input electrode SE3 and an outputelectrode DE3 which are disposed on the third insulating layer 30.

The semiconductor active layer ACT3 of the third transistor T3 may beformed of or may otherwise include poly silicon.

The shielding electrode SHD may be disposed to cover the channel regionof the first transistor T1. In the case where an oxide semiconductormaterial is exposed to external light, electric characteristics of theoxide semiconductor material may be deteriorated. Accordingly, theproper performance of the first transistor T1 may be deteriorated (e.g.,a shifted threshold voltage), because the channel region of the firsttransistor T1 includes an oxide semiconductor material.

The shielding electrode SHD may be disposed on the third conductivelayer and may be used to prevent external light from being incident intothe channel region of the first transistor T1.

In an organic light emitting display apparatus, according to someexemplary embodiments of the present inventive concept, light may beprevented from being incident into an oxide semiconductor, which isdisposed on the control electrode of the first transistor T1, and avariation in threshold voltage of the first transistor T1 may beprevented from being increased. Accordingly, the first transistor T1 mayoperate more reliably. As a result, a display quality of the organiclight emitting display apparatus may be increased.

The channel region of the first transistor T1 may be disposed on thecontrol electrode. Accordingly, in the case where a voltage is appliedto electrodes (e.g., the anode of the organic light emitting diode ED orthe refresh line RL) disposed on the first transistor T1, the voltagemay be an undesired gate voltage. In addition, in the case where thereis a voltage applied to the electrodes disposed on the first transistorT1, the channel region of the first transistor T1 may suffer from acoupling phenomenon.

In an organic light emitting display apparatus, according to someexemplary embodiments of the present inventive concept, the shieldingelectrode SHD may be configured to receive the power voltage ELVDD, andthis may make it possible to prevent the channel region of the firsttransistor T1 from being affected by a voltage, which is applied to anelectrode disposed on the shielding electrode SHD. Accordingly, thefirst transistor T1 may operate more reliably. As a result, a displayquality of the organic light emitting display apparatus may beincreased.

FIG. 9 is a flow chart illustrating a method of manufacturing an organiclight emitting display apparatus, according to exemplary embodiments ofthe present inventive concept.

A method of manufacturing an organic light emitting display apparatuswill be described with reference to FIG. 9 and FIGS. 5A to 5J.

Referring to FIG. 5A, a first semiconductor layer AL1 may be formed on asubstrate SUB (Step S11). Next, a first insulating layer 10 may beformed on the first semiconductor layer AL1. Referring to FIG. 5B, afirst conductive layer may be formed on the first insulating layer 10(Step S12). Thereafter, a second insulating layer 20 may be formed on afirst conductive layer 10. Referring to FIG. 5C, a second conductivelayer may be formed on the second insulating layer 20 (Step S13). Next,a third insulating layer 30 may be formed on the second conductivelayer. Referring to FIG. 5D, a second semiconductor layer AL2 may beformed on the third insulating layer 30 (Step S14). Referring to FIG.5E, a first contact hole group may be formed (Step S15). The firstcontact hole group may include first to tenth contact holes CH1-CH10.Referring to FIG. 5F, a third conductive layer may be formed on thethird insulating layer 30 (Step S16). A fourth insulating layer 40 maybe formed on the third conductive layer. Referring to FIG. 5G, a secondcontact hole group may be formed (Step S17). The second contact holegroup may include eleventh and twelfth contact holes CH11 and CH12.Referring to FIG. 5H, a shielding electrode SHD may be formed (StepS18). Thereafter, a fifth insulating layer 50 may be formed. Referringto FIG. 5I, a third contact hole group may be formed (Step S19). Thethird contact hole group may include thirteenth and fourteenth contactholes CH13 and CH14. Referring to FIGS. 5I and 5J, an organic lightemitting diode ED may be formed (Step S20).

In an organic light emitting display apparatus according to someexemplary embodiments of the present inventive concept, a drivingtransistor may be configured to operate more reliably and efficientlyand accordingly, the display quality of an organic light emittingdisplay apparatus may be increased.

In a method of manufacturing an organic light emitting display apparatusaccording to some exemplary embodiments of the present inventiveconcept, it is possible to increase the display quality of an organiclight emitting display apparatus.

While exemplary embodiments of the present inventive concepts have beenparticularly shown and described, it will be understood by one ofordinary skill in the art that variations in form and detail may be madetherein without departing from the spirit and scope of the inventiveconcept.

What is claimed is:
 1. An organic light emitting display (OLED) device,comprising: an organic light emitting diode including an anode and acathode, the cathode being configured to receive a reference voltage; acontrol transistor including a first control electrode and a firstsemiconductor active layer, the control transistor being configured toreceive a control signal; a driving transistor including a secondcontrol electrode that is electrically connected to the controltransistor, an input electrode that is configured to receive a powervoltage, an output electrode that is electrically connected to the anodeof the organic light emitting diode, and a second semiconductor activelayer that includes a different material from that of the firstsemiconductor active layer; and a shielding electrode disposed on thesecond semiconductor active layer, overlapping the driving transistor,and configured to receive the power voltage.
 2. The OLED device of claim1, wherein the first semiconductor active layer is disposed below thefirst control electrode, and the second semiconductor active layer isdisposed on the second control electrode.
 3. The OLED device of claim 2,wherein the shielding electrode covers the second control electrode. 4.The OLED device of claim 2, wherein the shielding electrode covers thesecond semiconductor active layer.
 5. The OLED device of claim 2,wherein the second semiconductor active layer comprises an oxidesemiconductor material.
 6. The OLED device of claim 5, wherein the oxidesemiconductor material comprises at least one metal oxide of a metalselected from the group consisting of zinc (Zn), indium (In), gallium(Ga), tin (Sn), and titanium (Ti) or mixtures of metals and oxidesthereof, wherein the metals comprise zinc (Zn), indium (In), gallium(Ga), tin (Sn), or titanium (Ti).
 7. The OLED device of claim 2, whereinthe first semiconductor active layer comprises poly silicon.
 8. The OLEDdevice of claim 1, wherein the shielding electrode comprises a samematerial as the input electrode of the driving transistor and the outputelectrode of the driving transistor.
 9. The OLED device of claim 1,wherein the shielding electrode comprises a first layer containing Ti, asecond layer containing Al, and a third layer containing Ti.
 10. TheOLED device of claim 1, wherein the control transistor comprises secondto sixth transistors.
 11. The OLED device of claim 10, furthercomprising: a data line configured to receive a data voltage; a powerline configured to receive the power voltage; a scan line configured toreceive an i-th scan signal; a dummy scan line configured to receive an(i−1)-th scan signal; a refresh control line configured to receive an(i+1)-th scan signal; a light-emitting line configured to receive alight-emitting control signal; and a refresh line configured to receivean initialization voltage.
 12. The OLED device of claim 11, wherein theinput electrode of the driving transistor is coupled to the fifthtransistor and the output electrode of the driving transistor is coupledto the sixth transistor, wherein the second transistor comprises aninput electrode coupled to the data line, a control electrode coupled tothe scan line, and an output electrode coupled to the output electrodeof the driving transistor, wherein the third transistor comprises aninput electrode coupled to the input electrode of the drivingtransistor, a control electrode coupled to the scan line, and an outputelectrode coupled to the first control electrode of the drivingtransistor, wherein the fourth transistor comprises an input electrodecoupled to the power line, a control electrode coupled to the dummy scanline, and an output electrode coupled to the first control electrode ofthe driving transistor, wherein the fifth transistor comprises an inputelectrode coupled to the power line, a control electrode coupled to thelight-emitting line, and an output electrode coupled to the inputelectrode of the driving transistor, wherein the sixth transistorcomprises an input electrode coupled to the output electrode of thedriving transistor, a control electrode coupled to the light-emittingline, and an output electrode coupled to the anode of the organic lightemitting diode, and wherein the seventh transistor comprises an inputelectrode coupled to the refresh line, an control electrode coupled tothe refresh control line, and an output electrode coupled to the anodeof the organic light emitting diode.
 13. An organic light emittingdisplay (OLED) device, comprising: an organic light emitting diodeincluding an anode and a cathode, the cathode being configured toreceive a reference voltage; a control transistor including a firstcontrol electrode and a first semiconductor active layer, wherein thefirst control electrode is configured to receive a control signal, andwherein the first semiconductor active layer is disposed below the firstcontrol electrode; a driving transistor including a second controlelectrode, an input electrode, an output electrode, and a secondsemiconductor active layer, wherein the second control electrode iselectrically connected to the control transistor, wherein the inputelectrode is configured to receive a power voltage, wherein the outputelectrode is electrically connected to the anode of the organic lightemitting diode, and wherein the second semiconductor active layer isdisposed on the second control electrode; and a shielding electrodedisposed on the second semiconductor active layer, wherein the shieldingelectrode overlaps the driving transistor and is configured to receivethe power voltage.
 14. The OLED device of claim 13, wherein the secondsemiconductor active layer comprises a different material from that ofthe first semiconductor active layer.
 15. The OLED device of claim 14,wherein the first semiconductor active layer comprises poly silicon, andthe second semiconductor active layer comprises an oxide semiconductormaterial.
 16. The OLED device of claim 13, wherein the shieldingelectrode is disposed over the second semiconductor active layer.
 17. Amethod of manufacturing an organic light emitting display apparatus,comprising: forming a first semiconductor layer on a base substrate;forming a first conductive layer on the first semiconductor layer;forming a second conductive layer on the first conductive layer; forminga second semiconductor layer on the second conductive layer; and forminga shielding electrode on the second semiconductor active layer, whereina portion of the first semiconductor layer forms a first semiconductoractive layer of a control transistor, wherein a portion of the firstconductive layer forms a first control electrode of the controltransistor, wherein a portion of the second conductive layer forms asecond control electrode of a driving transistor, and wherein a portionof the second semiconductor layer forms a second semiconductor activelayer of the driving transistor.
 18. The method of claim 17, wherein abuffer layer is formed between the base substrate and the firstsemiconductor layer, and wherein insulating layers are formed: betweenthe first conductive layer and the first semiconductor layer, betweenthe first conductive layer and the second conductive layer, and betweenthe second semiconductor layer and the second conductive layer.
 19. Themethod of claim 17, further comprising, forming a third conductivelayer, a portion of which is used as a power line and a data line afterthe forming of the second semiconductor layer and before the forming ofthe shielding electrode; and exposing a portion of the power line,wherein the shielding electrode is connected the exposed portion of thepower line.
 20. The method of claim 17, wherein the shielding electrodeis formed to cover the second semiconductor active layer.
 21. The methodof claim 17, wherein the second semiconductor layer is formed bydepositing and patterning an oxide semiconductor material.
 22. Anorganic light emitting display device, comprising: an organic lightemitting diode receiving a power voltage through a power line; a drivingtransistor including a channel region; and a shielding electrodedisposed over the channel region of the driving transistor andconfigured to receive the power voltage.